教育经历：

2014年-2019年, 大阳城8722，大阳城8722，博士

2010年-2014年，湖北大学，大阳城8722，学士

工作经历：

2021年-至今，大阳城8722，大阳城8722，教授

2019年-2021年, 香港城市大学，化学系，博士后

[1]     X. Zhang^#, Q. Liao^#, S. Liu^#, Z. Kang, Z. Zhang*, J. Du, F. Li, S. Zhang, J. Xiao, B. Liu, Y. Ou, X. Liu, L. Gu, and Y. Zhang*, Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS₂ homojunction photodiode. Nature Communications, 2017, 8, 15881.

[2]     X. Zhang^#, B. Liu^#, L. Gao, H. Yu, X. Liu, J. Du, J. Xiao, Y. Liu, L. Gu, Q. Liao, Z. Kang, Z. Zhang*, and Y. Zhang*. Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions. Nature Communications. 2021, 12, 1522.

[3]     X. Zhang^#, Q. Liao^#, Z. Kang^#, B. Liu, X. Liu, Y. Ou, J. Xiao, J. Du, Y. Liu, L. Gao, L. Gu, M. Hong, H. Yu, Z. Zhang*, X. Duan*, and Y. Zhang*. Hidden vacancy benefit in monolayer 2D semiconductors. Advanced Materials. 2021, 33(7), 2007051.

[4]     X. Zhang^#, Z. Kang^#, L. Gao^#, B. Liu, H. Yu, Q. Liao, Z. Zhang*, Y. Zhang. Molecule-upgraded van der Waals contacts for Schottky-barrier-free electronics. Advanced Materials. 2021, 33(45), 2104935.

[5]     X. Zhang^#, Huihui Yu^#, Wenhui Tang^#, Xiaofu Wei, Li Gao, Mengyu Hong, Qingliang Liao, Zhuo Kang, Zheng Zhang*, and Yue Zhang*. All-van-der-Waals barrier-free contacts for high-mobility transistors. Advanced Materials. 2022, DOI:10.1002/adma.202109521.

[6]     X. Zhang^#, Q. Liao^#, Z. Kang, B. Liu, Y. Ou, J. Du, J. Xiao, L. Gao, H. Shan, Y. Luo, Z. Fang, P. Wang, Z. Sun, Z. Zhang*, and Y. Zhang*. Self-healing originated van der Waals homojunctions with strong interlayer coupling for high-performance photodiodes. ACS Nano, 2019, 13, 3280-3291. (Supplementary Cover Article)

[7]     X. Zhang, L. Gao, H. Yu, Q. Liao, Z. Kang, Z. Zhang*, and Y. Zhang*. Single-atom vacancy doping in two-dimensional transition metal dichalcogenides. Accounts of Materials Research 2021, 2(8), 655-668.

[8]     L. Gao^#, Q. Liao^#, X. Zhang^#, X. Liu, L. Gu, B. Liu, J. Du, Y. Ou, J. Xiao, Z. Kang, Z. Zhang*, and Y. Zhang*. Defect-Engineered atomically thin MoS₂ homogeneous electronics for logic inverters. Advanced Materials, 2020, 32(2), 1906646.

[9]     B. Liu^#, X. Zhang^#. J. Du, J. Xiao, H. Yu, M. Hong, L. Gao, Y. Ou, Z. Kang, Q. Liao, Z. Zhang*, and Y. Zhang*, Synergistic-engineered van der Waals photodiodes with high efficiency. InfoMat, 2022, DOI: 10.1002/inf2.12282.

[10] Y. Yu^#, X. Zhang^#, Z. Zhou, Z. Zhang, Y. Bao, H. Xu, L. Lin, Y. Zhang*, and X. Wang*. Microscopic and quantitative characterization of defect in MoS₂ monolayer by pump-probe technique. Photonics Research, 2019, 7(7), 711-721.

[11] Wenhui Tang^#, X. Zhang^#, Huihui Yu, Gao Li, Xiaofu Wei, Mengyu Hong, Qinghua Zhang, Lin Gu, Qingliang Liao, Zhuo Kang, Zheng Zhang^*, and Yue Zhang^*. A van der Waals ferroelectric tunnel junction for ultrahigh temperature operation memory. Small Methods, 2022, DOI: 10.1002/smtd.202101583

[12] H. Yu, Z. Cao, Z. Zhang, X. Zhang*, and Y. Zhang*. Flexible electronics and optoelectronics of 2D van der Waals materials, International Journal of Minerals, Metallurgy and Materials, 2022, DOI: 10.1007/s12613-022-2426-3.

[1]   中央高校基本科研业务费，主持

期刊编委：Chinese Chemical Letters，Elsevier，2022-至今